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| MG150Q2YS65H TOSHIBA IGBT Module Silicon N Channel IGBT MG150Q2YS65H High Power & High Speed Switching Applications Unit: mm * High input impedance * Enhancement-mode * The electrodes are isolated from case. Equivalent Circuit www..com E1 E2 C1 E2 G1 E1/C2 G2 JEDEC JEITA TOSHIBA Weight: 255 g (typ.) 2-95A4A Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol Terminal Mounting 3/4 3/4 Rating 1200 20 150 300 150 300 890 150 -40 to 125 2500 (AC 1 minute) 3 3 Unit V V A Forward current Collector power dissipation (Tc = 25C) Junction temperature Storage temperature range Isolation voltage Screw torque A W C C V Nm 1 2002-10-04 MG150Q2YS65H Electrical Characteristics (Ta = 25C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff VF trr Rth (j-c) Turn-on Switching loss Turn-off Eon Eoff IF = 150 A, VGE = 0 IF = 150 A, VGE = -10 V, di/dt = 700 A/ms Transistor stage Diode stage Inductive load VCC = 600 V, IC = 150 A VGE = 15 V, RG = 5.6 W Tc = 125C Inductive load VCC = 600 V, IC = 150A VGE = 15 V, RG = 5.6 W Test Condition VGE = 20 V, VCE = 0 VCE = 1200 V, VGE = 0 VCE = 5 V, IC = 150 mA IC = 150 A, VGE = 15 V Tc = 25C Tc = 125C Min 3/4 3/4 4.0 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Typ. 3/4 3/4 3/4 3.0 3.6 12800 0.05 0.05 0.10 0.55 0.05 0.60 2.4 0.1 3/4 3/4 15 12 Max 500 2.0 7.0 4.0 3/4 3/4 3/4 3/4 3/4 3/4 0.15 3/4 3.5 3/4 0.14 0.28 3/4 3/4 V ms C/W ms Unit nA mA V V pF VCE = 10 V, VGE = 0, f = 1 MHz www..com Forward voltage Turn-off time Reverse recovery time Thermal resistance mJ Note: Switching time measurement circuit and input/output waveforms RG -VGE IC RG IF VGE 0 90% 10% trr L VCC IC VCE 0 10% td (off) toff tf 10% td (on) ton tr 90% 90% 2 2002-10-04 MG150Q2YS65H IC - VCE (sat) 300 20 V 12 V 18 V 15 V Common emitter Tc = 25C 250 10 V 300 Common emitter Tc = 125C IC - VCE (sat) 18 V 15 V 20 V 12 V 10 V 250 (A) IC Collector current 150 Collector current IC 200 (A) 200 150 100 100 50 VGE = 8 V 50 VGE = 8 V 0 0 2 4 6 8 10 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) www..com VCE - VGE 12 12 Common emitter Tc = 25C 10 VCE - VGE Common emitter Tc = 125C 10 (V) VCE 8 VCE Collector-emitter voltage (V) 8 IC = 300 A Collector-emitter voltage 6 IC = 300 A 4 150 A 6 4 150 A 2 75 A 2 75 A 0 0 4 8 12 16 20 0 0 4 8 12 16 20 Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V) IC - VGE 300 Common emitter VCE = 5 V 250 Tc = 125C 250 300 Common cathode VGE = 0 IF - VF (A) IC Collector current 150 Forward current IF 200 (A) -40C 200 150 Tc = 25C 100 125C 100 25C -40C 0 0 4 8 12 16 20 50 50 0 0 1 2 3 4 5 Gate-emitter voltage VGE (V) Forward voltage VF (V) 3 2002-10-04 MG150Q2YS65H Switching time - IC 1 : Tc = 25C : Tc = 125C Common emitter VCC = 600 V VGE = 15 V RG = 5.6 W ton 0.1 td (on) 1 Switching time - IC toff td (on) (ms) Switching time Switching time (ms) 0.1 tr Common emitter VCC = 600 V VGE = 15 V RG = 5.6 W 1000 0.01 10 100 tf 0.01 10 : Tc = 25C : Tc = 125C 1000 100 Collector current IC (A) Collector current IC (A) www..com Switching time - RG 1 : Tc = 25C : Tc = 125C ton 10 Switching time - RG Common emitter VCC = 600 V IC = 15 A VGE = 15 V : Tc = 25C : Tc = 125C (ms) (ms) td (on) tr 0.1 1 toff Switching time Switching time td (off) 0.1 tf Common emitter VCC = 600 V IC = 150 A VGE = 15 V 0.01 0 10 20 30 40 50 0.01 0 10 20 30 40 50 Gate resistance RG (9) Gate resistance RG (9) Switching loss - IC 100 : Tc = 25C : Tc = 125C Common emitter VCC = 600 V VGE = 15 V RG = 5.6 W 100 Switching loss - RG Common emitter VCC = 600 V IC = 150 A VGE = 15 V Eon (mJ) Switching loss 10 Switching loss Eon Eoff (mJ) Eoff 10 Edsw Edsw 1 0 50 100 150 200 1 0 : Tc = 25C : Tc = 125C 10 20 30 40 50 Collector current IC (A) Gate resistance RG (9) 4 2002-10-04 MG150Q2YS65H VCE, VGE - QG 1600 Common emitter RL = 4 W Tc = 25C 1200 VCE = 0 800 8 12 16 100000 C - VCE (V) VCE (V) Gate-emitter voltage VGE (pF) Cies 10000 Coes Cres 1000 Common emitter VGE = 0 f = 1 MHz Tc = 25C 100 0.01 Collector-emitter voltage 200 V 400 V 600 V 400 4 0 0 200 400 600 800 1000 Capacitance C 0.1 1 10 100 Charge QG (nC) Collector-emitter voltage VCE (V) www..com Short circuit SOA 6 1000 Reverse bias SOA 5 (x times) (A) Collector current IC 4 3 2 VCC < 900 V = 1 Tj < 125C = tw = 5 ms 0 0 200 400 600 800 1000 1200 1400 100 Collector current 10 1 Tj < 125C = VGE = 15 V RG = 5.6 W 0.1 0 500 1000 1500 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) Rth (t) - tw 1 Transient thermal resistance Rth (t) (C/W) Diode stage 0.1 Transistor stage 0.01 Tc = 25C 0.001 0.01 0.001 0.1 1 10 Pulse width tw (s) 5 2002-10-04 MG150Q2YS65H www..com RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 6 2002-10-04 |
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